| 发明名称 |
SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM |
| 摘要 |
A substrate processing apparatus, that performs oxidization on a surface of a substrate in a vacuum atmosphere formed in a vacuum chamber, includes an atmosphere gas supply part configured to supply an atmosphere gas into the vacuum chamber to form a processing atmosphere containing ozone and hydrogen donor, wherein a concentration of the ozone is above a threshold concentration to trigger chain reaction of decomposition. The substrate processing apparatus further includes an energy supply part configured to supply an energy to the processing atmosphere to oxidize a surface of a substrate with reactive species generated by forcibly decomposing the ozone and hydroxyl radical generated by reaction of the hydrogen donor. |
| 申请公布号 |
US2016148801(A1) |
申请公布日期 |
2016.05.26 |
| 申请号 |
US201514940843 |
申请日期 |
2015.11.13 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
YABE Kazuo;SHIMIZU Akira;HASEBE Kazuhide |
| 分类号 |
H01L21/02;C23C16/455 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A substrate processing apparatus for oxidizing a surface of a substrate in a vacuum atmosphere formed within a vacuum chamber, the apparatus comprising:
an atmosphere gas supply part configured to supply an atmosphere gas into the vacuum chamber to form a processing atmosphere containing an ozone and a hydrogen donor, wherein a concentration of the ozone is above a threshold concentration to trigger chain reaction of decomposition; and an energy supply part configured to supply an energy to the processing atmosphere to oxidize the surface of the substrate with reactive species generated by forcibly decomposing the ozone and a hydroxyl radical generated by reaction of the hydrogen donor. |
| 地址 |
Tokyo JP |
