发明名称 GAS BARRIER FILM AND ELECTRONIC DEVICE
摘要 The present invention provides a gas barrier film having high gas barrier properties and also having high durability even under harsh, high-temperature, high-humidity conditions. The gas barrier film includes a substrate and at least one gas barrier layer on the substrate, wherein the gas barrier layer includes at least one gas barrier layer A having a chemical composition of chemical formula (1): SiAlwOxNyCz, wherein w, x, y, and z are the elemental ratios of aluminum to silicon, oxygen to silicon, nitrogen to silicon, and carbon to silicon, respectively, measured in the thickness direction of the gas barrier layer, y is the maximum value of the elemental ratio of nitrogen to silicon measured in the thickness direction of the gas barrier layer and satisfies mathematical formula (1): 0.05≦y≦0.20, and w, x, and z satisfy mathematical formula (2): 0.07≦w≦0.20, mathematical formula (3): 1.90≦x≦2.40, and mathematical formula (4): 0.00≦z≦0.20, respectively, when measured at the point where the elemental ratio of nitrogen to silicon is the maximum value.
申请公布号 US2016149159(A1) 申请公布日期 2016.05.26
申请号 US201414903094 申请日期 2014.07.02
申请人 KONICA MINOLTA, INC. 发明人 MORI Takahiro
分类号 H01L51/52;C09D5/00;C09D7/12 主分类号 H01L51/52
代理机构 代理人
主权项 1. A gas barrier film comprising: a substrate; and at least one gas barrier layer on the substrate, wherein the gas barrier layer comprises at least one gas barrier layer A having a chemical composition of chemical formula (1), [Chem. 1]SiAlwOxNyCz  (1) wherein w, x, y, and z are elemental ratios of aluminum to silicon, oxygen to silicon, nitrogen to silicon, and carbon to silicon, respectively, measured in a thickness direction of the gas barrier layer, y is a maximum value of the elemental ratio of nitrogen to silicon measured in the thickness direction of the gas barrier layer and satisfies mathematical formula (1), and w, x, and z satisfy mathematical formulae (2) to (4) [Math. 1]0.05≦y≦0.20  mathematical formula (1)0.07≦w≦0.20  mathematical formula (2)1.90≦x≦2.40  mathematical formula (3)0.00≦z≦0.20  mathematical formula (4) respectively, when measured at a point where the elemental ratio of nitrogen to silicon is the maximum value.
地址 Tokyo JP