HIGH-ELECTRON MOBILITY TRANSISTOR AND PROCESS TO FORM THE SAME

摘要

An electron device formed by primarily nitrides semiconductor materials and a method to form the electron device are disclosed. The electron device includes, on the SiC substrate, a buffer layer of AlN, a channel layer of GaN, and an electron supplying layer of AlGaN. The AlGaN layer has the oxygen concentration higher than the carbon concentration in the whole thereof. The AlGaN layer is grown on the channel layer under conditions of: a ratio of the flow rate of the ammonia gas against the flow rate of the gases for Al and Ga is 5000 to 20000; and/or the growth, rate of the AlGaN layer is slower than 0.2 nm/sec.

主权项

1. A semiconductor device, comprising:
a channel layer including a first nitride semiconductor; an electron supplying layer provided on the channel layer, the electron supplying layer including a second nitride semiconductor containing aluminum (Al); and a gate electrode, a source electrode and a drain electrode each provided on the electron supplying layer, wherein the second nitride semiconductor has an oxygen concentration greater than a carbon concentration.