| 摘要 |
The present invention provides a method for manufacturing a non-catalytic substrate growing graphene which comprises the following processes: a. preparing a substrate; supplying carbon-containing gas at the temperature of lower than or equal to 500°C, and performing inductively coupled plasma-chemical vapor deposition (ICP-CVD); c. growing graphene on the metal layer without having a catalytic layer, as a heteroepitaxial growth type of a van der Waals type generated by adsorption and diffusion of hydrocarbon radicals and a nucleus on a surface of the substrate. |
