发明名称 半導体記憶装置
摘要 According to one embodiment, a semiconductor storage device includes first cells, first bit and first word, and first sense. The first cells are capable of holding 2-level or higher-level data. The first bit and first word are capable of selecting the first cells. The first sense detects a first current. The first sense includes a first supply unit, a first accumulation unit, a detector, and a counter. The first supply unit supplies a second current when the data is read. The first accumulation unit accumulates an amount of charge. The detector detects the potential the amount of charge. The counter counts output from the detector. The counter includes a second supply unit, a second accumulation unit, and a sensing unit. The second supply unit charges a first node. The second accumulation unit accumulates a charge. The sensing unit detects the amount of charge of the second accumulation unit.
申请公布号 JP5925644(B2) 申请公布日期 2016.05.25
申请号 JP20120198869 申请日期 2012.09.10
申请人 株式会社東芝 发明人 濱田 誠
分类号 G11C13/00;G11C16/02;G11C16/04;G11C16/06 主分类号 G11C13/00
代理机构 代理人
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