| 摘要 |
Provided is a non-volatile semiconductor storage device that can surely prevent malfunction of read transistors without an increase in the number of bit lines. In a non-volatile semiconductor storage device (1), a second bit line (BLN1) that is connected to a program transistor (5a) of a first cell (2a) so as to serve for data writing is caused to double as a bit line for reading in another second cell (2b) by switching switch transistors (SWa, SWb), and program transistors (5a, 5b) and erase transistors (3a, 3b) that serve as charge transfer paths at the time of writing data and at the time of deletion of data are provided. This configuration makes it possible to surely prevent malfunction of read transistors (4a, 4b) that occurs when the read transistors are used for writing or deletion of data, without increasing the number of bit lines. |
