发明名称 VAPOR PRESSURE SIMULATION METHOD FOR PRECURSOR
摘要 The present invention relates to a simulation method for a vapor pressure of a precursor to predict the vapor pressure of the precursor without an actual experiment for evaluating a performance of the precursor, by calculating the vapor pressure of the precursor with a molecular dynamics simulation scheme. The simulation method for the vapor pressure of the precursor according to the present invention includes: a model setting step of setting a precursor model by configuring a simulation cell; a structure optimization step of minimizing and optimizing internal energy of the precursor model; a simulation specimen preparation step of preparing a simulation specimen after a step of stabilizing volume of the optimized precursor model and a step of minimizing entire energy; and a vapor pressure calculation step of calculating the vapor pressure while changing the temperature within a range of the temperature required for a measurement by using the simulation specimen.
申请公布号 KR20160058545(A) 申请公布日期 2016.05.25
申请号 KR20140160186 申请日期 2014.11.17
申请人 HYUNDAI MOTOR COMPANY 发明人 KYOUNG, WOO MIN;SEO, JI YOUN
分类号 G06F17/50;G01M99/00 主分类号 G06F17/50
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