发明名称 |
RF amplifier |
摘要 |
A two-stage RF amplifier is provided. The first stage is a common-emitter transistor arrangement with a purely reactive degeneration impedance and an output impedance with a reactive component matched in frequency response to the degeneration impedance. The second stage is a buffer amplifier. The first amplifier can be designed for high gain which is flat over frequency by virtue of the reactive degeneration impedance. The first amplifier provides input matching, and the buffer provides output matching, with decoupling between the input and output. |
申请公布号 |
EP2869465(B1) |
申请公布日期 |
2016.05.25 |
申请号 |
EP20130191286 |
申请日期 |
2013.11.01 |
申请人 |
NXP B.V. |
发明人 |
SIMIN, ALEXANDER;GUL, HASAN;HOOGZAAD, GIAN |
分类号 |
H03F3/191;H03F1/22;H03F3/50 |
主分类号 |
H03F3/191 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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