| 摘要 |
The method involves forming a cavity in a via on a face (220) of a substrate, and forming an insulating layer (240) on a lateral wall and a bottom part of the cavity and on the face of the substrate. A line pattern is formed on the face of the substrate, and a trench (244) is formed in a portion of the insulating layer located on the face of the substrate, where the trench opens into the cavity. The line pattern and the cavity are filled by electrically conducting material, where the cavity is not completely filled by the material. |
