SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

Provided are a semiconductor device and a method for fabricating the same. The method for fabricating the semiconductor device includes: forming a first, a second, a third and a fourth fins which are formed so that the fins are extended in a first direction and arranged so that the fins are separated in a second direction intersecting with the first direction; forming a first and a second gate lines which are formed so that the gate lines are extended in the second direction on the first through fourth fins and arranged so that the gate lines are separated in the first direction; forming a first contact on the first gate line between the first fin and the second fin; forming a second contact on the first gate line between the third fin and the fourth fin; forming a third contact on the second gate line between the first fin and the second fin; forming a fourth contact on the second gate line between the third fin and the fourth fin; and forming a fifth contact, which overlaps the second and third contacts and does not overlap the first and fourth contacts, on the first through fourth contacts, wherein the fifth contact is arranged so that the fifth contact diagonally traverses a quadrangle defined by the first through fourth contacts.