发明名称 |
CMOS IMAGE SENSOR WITH PERIPHERAL TRENCH CAPACITOR |
摘要 |
An example complementary metal oxide semiconductor (CMOS) image sensor includes an epitaxial layer, an array of pixels, and a trench capacitor. The array of pixels are formed on a front side of the epitaxial layer in an pixel array area of the image sensor. The array of pixels includes one or more shallow trench isolation structures disposed between adjacent pixels for isolating the pixels in the pixel array area. The trench capacitor is formed on the front side of the epitaxial layer in a peripheral circuitry area of the image sensor. |
申请公布号 |
HK1179756(A1) |
申请公布日期 |
2016.05.20 |
申请号 |
HK20130106827 |
申请日期 |
2013.06.09 |
申请人 |
OMNIVISION TECHNOLOGIES INC. |
发明人 |
YANG, RONGSHENG;LIN, ZHIQIANG |
分类号 |
H01L;H04N |
主分类号 |
H01L |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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