| 摘要 |
The present invention is to provide a solid-state imaging device and a manufacturing method to stabilize the potential in an effective pixel area, to improve at least pixel characteristics, and to reduce the number of manufacturing processes. The solid-state imaging device comprises: a first conductive semiconductor well area; multiple pixels which are formed in the semiconductor well area, and include photoelectric conversion unit and pixel transistors; element isolation areas between the pixels and in the pixels; and element isolation areas which do not have an insulation film between required pixel transistors. |
