| 主权项 |
1. A semiconductor element, comprising:
a substrate; a gate electrode on the substrate; a first gate insulating layer disposed on the substrate so as to cover the gate electrode; a source electrode and a drain electrode formed with a gap therebetween on the first gate insulating layer such that, in a plan view, the source electrode and the drain electrode are disposed on respective sides of the gate electrode and both partially overlap the gate electrode through the first gate insulating layer; a second gate insulating layer formed on the first gate insulating layer in at least a region between the source electrode and the drain electrode; and a semiconductor layer formed on the second gate insulating layer and on the source electrode and the drain electrode, said semiconductor layer overlapping the gate electrode through the first gate insulating layer and the second gate insulating layer, wherein the source electrode and the drain electrode each include a plurality of layers, wherein, in each of the source electrode and the drain electrode, an uppermost layer is formed of a material that has a smaller difference in work function relative to the semiconductor layer as compared to other layers respectively constituting the source electrode and the drain electrode, and wherein respective top and side faces of the source electrode and the drain electrode contact the semiconductor layer directly, and said other layers respectively constituting the source electrode and the drain electrode are separated from the semiconductor layer by at least one of the second gate insulating layer and the respective uppermost layers of the source electrode and the drain electrode. |
