| 发明名称 |
INTERLAYER DIELECTRIC LAYER WITH TWO TENSILE DIELECTRIC LAYERS |
| 摘要 |
A semiconductor device is disclosed. The semiconductor device includes: a substrate; a first tensile dielectric layer on the substrate; a metal gate in the first tensile dielectric layer; a second tensile dielectric layer on the first tensile dielectric layer; and a contact plug in the first tensile dielectric layer and the second tensile dielectric layer. Preferably, the top surface of the contact plug is even with the top surface of the second tensile dielectric layer, and a carbon content of the second tensile dielectric layer is greater than the carbon content of the first tensile dielectric layer. |
| 申请公布号 |
US2016141383(A1) |
申请公布日期 |
2016.05.19 |
| 申请号 |
US201615003813 |
申请日期 |
2016.01.22 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Lin Yu-Cheng;Shih Hui-Shen |
| 分类号 |
H01L29/51;H01L29/78;H01L23/535;H01L29/423 |
主分类号 |
H01L29/51 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate; a first tensile dielectric layer on the substrate; a metal gate in the first tensile dielectric layer; a second tensile dielectric layer on the first tensile dielectric layer, wherein a carbon content of the second tensile dielectric layer is greater than the carbon content of the first tensile dielectric layer; and a contact plug in the first tensile dielectric layer and the second tensile dielectric layer, wherein the top surface of the contact plug is even with the top surface of the second tensile dielectric layer. |
| 地址 |
Hsin-Chu City TW |
