| 摘要 |
PROBLEM TO BE SOLVED: To enable prevention of pattern collapse in a wafer during supercritical processing.SOLUTION: A substrate processing method comprises a step of supplying a wafer with rinse liquid DIW, IPA, first fluorine-containing organic solvent HFE7300 and second fluorine-containing organic solvent FC43 in an outer chamber 21 of a liquid processing unit 2, a step of conveying the wafer into a processing container of a supercritical unit 3, and a step of supplying the wafer in the processing container with supercritical processing fluorine-containing organic solve which is set to high-pressure fluid under a supercritical state. At least when IPA is supplied, low humidity Ngas is supplied into the outer chamber 21 to set the inside of the outer chamber 21 to a low-humidity Ngas environment, whereby absorption of moisture into IPA is prevented.SELECTED DRAWING: Figure 5 |
