| 摘要 |
According to an embodiment of the present invention, a light emitting device comprises a light emitting structure, a first stepped structure, a protective layer, a first electrode layer, a second electrode layer and an insulation layer. The light emitting structure includes: a first semiconductor layer; an active layer positioned below the first semiconductor layer; and a second semiconductor layer positioned below the active layer. The first stepped structure is formed by opening a lower periphery of the first semiconductor layer. The protective layer is arranged below the second semiconductor layer. The first electrode layer is arranged below the second semiconductor layer and the protective layer and is electrically connected to the second semiconductor layer. The second electrode layer is arranged below the second semiconductor layer and is electrically connected to the first semiconductor layer. The insulation layer is arranged between the first electrode layer and the second electrode layer. At least one of the protective layer, the insulation layer and the second electrode layer is extended in the first stepped structure. The outer side surface of the first semiconductor layer adjacent to the first stepped structure is arranged on a vertical plane equal to the outer side surface of the second electrode layer. The light emitting device has an improved light emitting area. |
