| 发明名称 |
THREE-DIMENSIONAL MEMORY AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
A three-dimensional (3D) memory and a method for manufacturing the same are disclosed. According to one embodiment, the 3D memory comprises a thin-film transistor. The thin-film transistor has a source region and a drain region disposed separately. The source region comprises a first source region and a second source region disposed between the first source region and the drain region. The first source region is p-type of doping, the second source region is n-type of doping, and the drain region is n-type of doping. |
| 申请公布号 |
US2016141300(A1) |
申请公布日期 |
2016.05.19 |
| 申请号 |
US201414541169 |
申请日期 |
2014.11.14 |
| 申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
Hsiao Yi-Hsuan;Chen Wei-Chen |
| 分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A three-dimensional (3D) memory, comprising:
a thin-film transistor having a source region and a drain region disposed separately, wherein the source region comprising a first source region and a second source region disposed between the first source region and the drain region, and wherein the first source region is p-type of doping, the second source region is n-type of doping, and the drain region is n-type of doping. |
| 地址 |
Hsinchu TW |
