发明名称 METHOD OF FORMING GRATING PATTERN ON AN INNER WALL FACE AND A ARC CHAMBER OF ION IMPLANT APPARATUS COMPRISING THE GRATING PATTERN
摘要 The present invention relates to a method for forming a grating pattern on the inner wall of an arc chamber which prevents a short between an internal member due to an inner wall adsorbate by extending the absorption area of the inner wall through the grating pattern engraved in the inner wall, and especially solves operation instability or the deterioration of equipment performance generated in using an existing supplement installed in a chamber to extend the absorption area by engraving the grating pattern in the inner wall of the chamber. The method includes (a) a step of preparing an internal component for improving a grating pattern in the arc chamber of an ion implant apparatus; and (b) a step of installing the internal component to a milling machine and engraving a straight-line groove which vertically intersects with the object surface of grating pattern formation.
申请公布号 KR101622892(B1) 申请公布日期 2016.05.19
申请号 KR20150189863 申请日期 2015.12.30
申请人 SET CO., LTD. 发明人 WON, BONG YEON;YUN, JAE IM
分类号 H01L21/265;H01J37/317;H01L21/02;H01L21/225 主分类号 H01L21/265
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