发明名称 |
GALLIUM NITRIDE POWER SEMICONDUCTOR DEVICE HAVING A VERTICAL STRUCTURE |
摘要 |
A semiconductor device includes a substrate having first and second sides and a first active layer disposed over the first side of the substrate. A second active layer is disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. At least one trench extends through the first and second active layers and the two-dimensional electron gas layer and into the substrate. A conductive material lines the trench. A first electrode is disposed on the second active layer and a second electrode is disposed on the second side of the substrate. |
申请公布号 |
EP3020070(A1) |
申请公布日期 |
2016.05.18 |
申请号 |
EP20140823270 |
申请日期 |
2014.06.18 |
申请人 |
VISHAY GENERAL SEMICONDUCTOR LLC |
发明人 |
CHEN, MAX SK;LIN, YIH-YIN |
分类号 |
H01L29/205;H01L29/20;H01L29/417;H01L29/778;H01L29/872 |
主分类号 |
H01L29/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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