发明名称 POWER SEMICONDUCTOR MODULE
摘要 Provided is a power semiconductor module wherein stress generated at a soldering section of a relay terminal is relaxed. A power semiconductor module (1) is provided with a substrate (2), relay terminals (9, 10), external connecting terminals (13, 14), and a relay terminal holding member (6). The relay terminals (9, 10) are connected to the substrate (2) with a solder (4) therebetween. The external connecting terminals (13, 14) are bonded to the relay terminals (9, 10), respectively. The non-conductive relay terminal holding member (6) holds end portions of the relay terminals (9, 10), said end portions being on the side bonded to the solder (4).
申请公布号 EP3021358(A1) 申请公布日期 2016.05.18
申请号 EP20140822617 申请日期 2014.05.16
申请人 HITACHI AUTOMOTIVE SYSTEMS, LTD. 发明人 WATARI, SHINJIRO;KOKUBUN, SHUICHI;YAMADA, TAKESHI;HARADA, TSUYOSHI
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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