| 摘要 |
A copper alloy for an electronic device is provided wherein the copper alloy is composed of a binary alloy of Cu and Mg, the binary alloy comprises Mg at a content in a range of 3.3 to 6.9 atomic%, with a remainder being Cu and inevitable impurities, a conductivity à (%IACS) is within the following range when the content of Mg is given as A atomic%, à ‰¤ {1.7241/(-0.0347×A 2 +0.6569×A+1.7)× 100, and the copper alloy is a Cu-Mg solid solution alloy supersaturated with Mg. |
