| 摘要 |
A negative resist composition comprising a polymer comprising recurring units (a) of formula (1) and having a Mw of 1,000-500,000 as base resin is provided. R1 is H or methyl, X is a single bond or —C(═O)—O—R4—, R2 is a single bond or C1-C4 alkylene, R3 is C2-C8 alkylene, R4 is a single bond or C1-C4 alkylene, and 0<a≦̸1.0. The composition exhibits a high resolution due to controlled acid diffusion and forms a resist film which is unsusceptible to swell in the developer and hence to pattern collapse. |
