| 摘要 |
A method for manufacturing a semiconductor device is provided. The method for manufacturing a semiconductor device comprises: a step of forming an interlayer insulation film including a first trench and a second trench on a substrate; a step of forming a lower gate conductive film along the side and bottom of the second trench; a step of forming a first capping gate conductive film along the side and bottom of the first trench; a step of forming a second capping gate conductive film on the lower gate conductive film; a step of forming a first upper gate conductive film and a second upper gate conductive film on the first capping gate conductive film and the second capping gate conductive film, respectively; a step of forming a first barrier film and a second barrier film on the first upper gate conductive film and the second upper gate conductive film, respectively; and a step of forming a first metal film and a second metal film on the first barrier film and the second barrier film, respectively, wherein the thicknesses of the first barrier film and the second barrier film are equal to or more than 40Å. |
