| 摘要 |
An embodiment of the present invention relates to a light emitting device, a method for manufacturing the same, a light emitting device package, and a lighting system. According to the embodiment, an ultraviolet light emitting device includes: a first conductive semiconductor layer (112); an active layer (114) which is arranged on the top of the first conductive semiconductor later (112) and includes a quantum wall (114B) and a quantum well (114W); and a second conductive semiconductor layer (116) arranged on the top of the active layer (114). The quantum wall (114B) can include an undoped Al_xGa_(1-x)N layer (114BU) (0<=x<=1) and n-type Al_yGa_(1-y)N layer (114BN) (0<=y<=1). |
