Memory arrays and methods of forming same

摘要

Memory arrays and methods of forming the same are provided. One example method of forming a memory array can include forming a first conductive material having a looped feature using a self-aligning multiple patterning technique, and forming a first sealing material over the looped feature. A first chop mask material is formed over the first sealing material. The looped feature and the first sealing material are removed outside the first chop mask material.

主权项

1. A memory array structure, comprising:
a first set of conductive lines having a first loop feature chopped therefrom, wherein the first set of conductive lines is adjacent to a substrate; a second set of conductive lines including a plurality of second loop features; a sealing material conformally formed over the plurality of second loop features; and a number of phase change material and switch (PCMS) memory cells arranged in a cross-point array within an array region between the first set and the second set of conductive lines, the first set and the second set of conductive lines being at different elevations, wherein the first set and the second set of conductive lines respectively extend outside the array region, and wherein the plurality of second loop features includes a directly adjacent set of innermost loops in a first socket region on a side of the array region that are outermost loops in a second socket region on an opposite side of the array region.