发明名称 Method of processing a substrate
摘要 In a method of processing a substrate in accordance with an embodiment, a trench may be formed in the substrate, a stamp device may be disposed at least in the trench; at least one part of the trench that is free from the stamp device may be at least partially filled with trench filling material; and the stamp device may be removed from the trench.
申请公布号 US9339868(B2) 申请公布日期 2016.05.17
申请号 US201414247274 申请日期 2014.04.08
申请人 Infineon Technologies AG 发明人 Ortner Joerg;Sorger Michael
分类号 B22D19/00;H01L21/02;H01L21/768;H01L21/311;H01L21/48;H01L23/00;G03F7/00;B82Y10/00;B82Y40/00;H05K1/02 主分类号 B22D19/00
代理机构 代理人
主权项 1. A method of processing a substrate, comprising: forming a trench in the substrate; disposing a stamp device at least in the trench; filling, after disposing the stamp device at least in the trench, at least one part of the trench that is free from the stamp device at least partially with trench filling material, wherein a shape of the trench filling material in the trench comprises a three-dimensional (3D) pattern having at least one of a protrusion or an indentation; removing the stamp device from the trench after the filling with the trench filling material; and depositing filling material at least into the trench after removal of the stamp device while the trench filling material substantially remains in the trench, wherein the trench is free of any stamp device during the deposition of the filling material.
地址 Neubiberg DE