发明名称 |
Three dimensional stacking memory film structure |
摘要 |
A memory device includes a plurality of stacks of alternating active strips and insulating strips. The insulating strips have effective oxide thicknesses (EOT) so that the stacks have non-simple spatial periods on a line through the alternating active strips and insulating strips. A plurality of conductive lines are arranged orthogonally over, and have surfaces conformal with, the plurality of stacks, defining a multi-layer array of interface regions at cross-points between side surfaces of the active strips in the stacks and the conductive lines. Memory elements are disposed in the interface regions, which establish a 3D array of memory cells accessible via the plurality of active strips and the plurality of conductive lines. The insulating strips in the stacks can include a first group of strips having a first EOT and a second group of strips having a second EOT that is greater than the first EOT. |
申请公布号 |
US9343322(B2) |
申请公布日期 |
2016.05.17 |
申请号 |
US201414158589 |
申请日期 |
2014.01.17 |
申请人 |
Macronix International Co., Ltd. |
发明人 |
Chen Shih-Hung |
分类号 |
G11C5/06;H01L21/308;G11C7/00;H01L21/3213;H01L21/311;H01L21/306;H01L27/115 |
主分类号 |
G11C5/06 |
代理机构 |
Haynes Beffel & Wolfeld LLP |
代理人 |
Wu Yiding;Haynes Beffel & Wolfeld LLP |
主权项 |
1. A memory device, comprising:
a plurality of stacks of alternating active strips and insulating strips, the insulating strips having effective oxide thicknesses (EOT) so that the stacks have non-simple spatial periods on a line through the alternating active strips and insulating strips; a plurality of conductive lines arranged orthogonally over, and having surfaces conformal with, the plurality of stacks, defining a multi-layer array of interface regions at cross-points between side surfaces of the active strips in the stacks and the conductive lines; and memory elements in the interface regions, which establish a 3D array of memory cells accessible via the plurality of stacks of active strips and the plurality of conductive lines. |
地址 |
Hsinchu TW |