发明名称 |
Deflection mirror and projection exposure apparatus for microlithography comprising such a deflection mirror |
摘要 |
A deflection mirror (1, 501, etc.) for a microlithography projection exposure apparatus for illuminating an object field in an object plane of the projection exposure apparatus (1067) using the deflection mirror with grazing incidence. This deflection mirror has a substrate (3, 503, etc.) and at least one layer system (5, 505, etc.), and during operation light impinges on said mirror at a multiplicity of angles of incidence, wherein the layer system is designed such that, for light having a wavelength of less than 30 nm, for an angle of incidence of between 55° and 70°, the variation of the reflectivity is less than 20%, in particular less than 12%. |
申请公布号 |
US9341958(B2) |
申请公布日期 |
2016.05.17 |
申请号 |
US201314032724 |
申请日期 |
2013.09.20 |
申请人 |
Carl Zeiss SMT GmbH |
发明人 |
Enkisch Hartmut;Muellender Stephan;Endres Martin |
分类号 |
G03B27/54;G03F7/20;G02B17/06;G21K1/06;B82Y10/00 |
主分类号 |
G03B27/54 |
代理机构 |
Edell, Shapiro & Finnan, LLC |
代理人 |
Edell, Shapiro & Finnan, LLC |
主权项 |
1. A deflection mirror for a microlithography projection exposure apparatus for illuminating an object field in an object plane of the projection exposure apparatus using the deflection mirror with grazing incidence, comprising a substrate and at least one layer system, wherein during operation light impinges on the deflection mirror at a multiplicity of angles of incidence, and wherein the layer system is designed such that, for light having a wavelength of less than 30 nm and for any two angles of incidence of between 55° and 70°, the variation of the reflectivity is less than 20%,
wherein the layer system has local thicknesses and the minimum local thickness of the layer system deviates from the maximum local thickness of the layer system by at least 1% of the minimum local thickness, and wherein the local thicknesses in the layer system increase as the angle of incidence increases. |
地址 |
Oberkochen DE |