发明名称 LCOS device and method of fabricating the same
摘要 The present invention provides a LCOS device including a silicon substrate, a first dielectric layer, a first mirror layer, a second dielectric layer, and a second mirror layer. The first dielectric layer is disposed on the silicon substrate. The first mirror layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first mirror layer. The second mirror layer is disposed on the second dielectric layer.
申请公布号 US9341884(B2) 申请公布日期 2016.05.17
申请号 US201314034396 申请日期 2013.09.23
申请人 United Microelectronics Corp. 发明人 Hsu Yi-Ming;Hsu Feng-Ying;Tsai Chieh-Yu
分类号 G02F1/1335;G02F1/1343;G02F1/1362;G02B5/08 主分类号 G02F1/1335
代理机构 J.C. Patents 代理人 J.C. Patents
主权项 1. A method of fabricating a liquid crystal on silicon (LCOS) device, comprising: forming a first dielectric layer on a silicon substrate; forming a first mirror layer on the first dielectric layer; forming a second dielectric layer on the first mirror layer; and forming a second mirror layer on the second dielectric layer, wherein a grain size of a material of the second mirror layer is less than a grain size of a material of the first mirror layer, wherein a width of the first mirror layer is wider than a width of the second mirror layer, the grain size of the material of the first mirror layer and the grain size of the material of the second mirror layer are capable of providing improved reflectance, a thickness of the first mirror layer is in a range of 2000-10000 Å, and a thickness of the second mirror layer is in a range of 800-2000 Å.
地址 Hsinchu TW