| 摘要 |
Provided is a power semiconductor module capable of suppressing current unbalance by increasing an inductance ratio of a wiring pattern, and reducing variance of source potentials of self-arc-extinguishing semiconductor elements mounted on an insulating substrate. This power semiconductor module is characterized in being provided with: positive and negative arms, each of which is configured by connecting self-arc-extinguishing semiconductor elements (6) in series, and has series connection points of the self-arc-extinguishing semiconductor elements (6); and a substrate (2) having formed thereon positive electrode-side electrodes (10), negative electrode-side electrodes (11), and alternating current electrodes (12), said positive electrode-side electrodes, negative electrode-side electrodes, and alternating current electrodes being connected to the positive and negative arms, and a plurality of wiring patterns (3, 4), which connect the self-arc-extinguishing semiconductor elements (6) of the positive and negative arms with positive electrode-side electrodes (10), the negative electrode-side electrodes (11), and the alternating current electrodes (12). The power semiconductor module is also characterized in that the directions in which currents are flowing in the wiring patterns (4) adjacent to each other are same, and one of the wiring patterns (4) is disposed mirror-symmetrical with respect to the other one of the wiring patterns (4). |
