SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a SiC semiconductor device which can achieve high breakdown voltage and high reliability while inhibiting an increase in production cost.SOLUTION: In a SiC semiconductor device, a surface of a termination region is covered with a passivation film 6. The passivation film 6 includes: a thermally oxidized silicon film 6a which contacts the surface of te termination region; a CVD silicon oxide film 6b which is laminated on the thermally oxidized silicon film 6a and contacts the thermally oxidized silicon film 6a; and a CVD silicon oxide film 6c which is laminated on the CVD silicon oxide film 6b and contacts the CVD silicon oxide film 6b. As a result, an electric field applied to the passivation film 6 can be mitigated and production cost can be reduced.SELECTED DRAWING: Figure 1