| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element excellent in adhesion between a nitride semiconductor portion and a passivation layer.SOLUTION: A nitride semiconductor element comprises: a substrate 1 composed of aluminum nitride single crystal; a nitride semiconductor part 3 formed on the substrate 1; a passivation layer 5 which is formed on the substrate 1 and covers the nitride semiconductor part; and an altered layer 7 which is formed on a lateral face 6a of a laminated part 6 having the substrate 1 and the passivation layer 5 and contains whole constituent elements of the substrate 1 and the passivation layer 5 as constituent components.SELECTED DRAWING: Figure 1 |
