发明名称 PROBES FORMED FROM SEMICONDUCTOR REGION VIAS
摘要 Embodiments of the invention describe forming a set of probes using semiconductor regions each including a plurality of vias. A first set of probe segments may be formed from a first set of vias on a first semiconductor region. A second set of probe segments may be formed from a second set of vias on a second semiconductor region and bonded to the first set of probe segments. At least one spring comprising a dielectric material may be formed to couple the first set of probe segments, while a set of metal tips disposed on the second set of probe segments.
申请公布号 US2012038379(A1) 申请公布日期 2012.02.16
申请号 US20100854697 申请日期 2010.08.11
申请人 MA QING;SWART ROY E.;FISCHER PAUL B.;SWAN JOHANNA M. 发明人 MA QING;SWART ROY E.;FISCHER PAUL B.;SWAN JOHANNA M.
分类号 G01R31/20 主分类号 G01R31/20
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