发明名称 PLASMA PROCESSING APPARATUS
摘要 The present invention is to introduce gas without generating discharge. The plasma processing apparatus comprises: a processing container which partitions a processing space; a gas supply unit which is installed on a side wall of the processing container and supplies the processing space; a dielectric member which has an opposed face opposed to the processing space; and an antenna which is installed on the face opposite to the opposed face of the dielectric member, and radiates a microwave for making gas into plasma, to the processing space through the dielectric member. The gas supply unit has a transport hole for transporting gas to a position not reaching the processing space inside the side wall of the processing container, and an injection hole which communicates with the transport hole, injects the gas transported to the position, to the processing space, and has a diameter larger than that of the transport hole.
申请公布号 KR20160053816(A) 申请公布日期 2016.05.13
申请号 KR20150154429 申请日期 2015.11.04
申请人 TOKYO ELECTRON LIMITED 发明人 YOSHIKAWA JUN
分类号 H01L21/02;H01L21/205;H01L21/3065;H05H1/46 主分类号 H01L21/02
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