| 摘要 |
The present invention provides a technique for adjusting in-plane distribution of plasma density, in a plasma processing apparatus which performs a plasma process on a substrate to be treated. A plasma processing apparatus which performs a plasma process on a processing gas and using the processed gas to process a substrate W to be treated which is loaded on a susceptor (21) in a processing container (1) includes a plasma generation unit for converting a processing gas into plasma by an inductive coupling. A first high frequency antenna (541) of the plasma generating unit is composed of a vortex coil having open ends and a resonant frequency corresponding to high frequency, and at a central portion, a supply point of high frequency and a grounding point grounded through a condenser (64). A second high frequency antenna (542) is composed of a vortex coil and is disposed between high frequency antenna elements (541a, 541b) constituting the first high frequency antenna (541). An impedance adjustment unit (62-65) is configured so that both high frequency antenna elements (541a, 541b) have different resonant frequencies from each other. |
