METHOD FOR MANUFACTURING CRYSTALLINE SILICON-BASED SOLAR CELL AND METHOD FOR MANUFACTURING CRYSTALLINE SILICON-BASED SOLAR CELL MODULE

摘要

A method for manufacturing a crystalline silicon-based solar cell having a photoelectric conversion section includes a silicon-based layer of an opposite conductivity-type on a first principal surface side of a crystalline silicon substrate of a first conductivity-type, and a collecting electrode formed by an electroplating method on a first principal surface of the photoelectric conversion section. By applying laser light from a first or second principal surface side of the photoelectric conversion section, an insulation-processed region his formed where a short-circuit between the first principal surface and a second principal surface of the photoelectric conversion section is eliminated. On the collecting electrode and/or the insulation-processed region, a protecting layer s formed for preventing diffusion of a metal, which is contained in the collecting electrode into the substrate. After the protecting layer is formed, the insulation-processed region is heated to eliminate leakage between the substrate and the silicon-based layer.

主权项

1. A method of manufacturing a crystalline silicon-based solar cell, the crystalline silicon-based solar cell comprising: a photoelectric conversion section including a crystalline silicon substrate of a first conductivity-type having a first principal surface and a second principal surface, and a silicon-based layer of an opposite conductivity-type on the first principal surface side of the crystalline silicon substrate; and a collecting electrode formed on the first principal surface of the photoelectric conversion section, the method comprises:
a photoelectric conversion section providing step of providing the photoelectric conversion section; a collecting electrode forming step of forming the collecting electrode on the first principal surface of the photoelectric conversion section by an electroplating method; an insulation process step of applying laser light from the first principal surface side or the second principal surface side of the photoelectric conversion section to the crystalline silicon substrate of the first conductivity-type to form an insulation-processed region where a short-circuit between the first principal surface and the second principal surface of the photoelectric conversion section is eliminated; a protecting layer forming step of forming on the collecting electrode and/or on the insulation-processed region a protecting layer for preventing diffusion of a metal, which is contained in the collecting electrode, into the crystalline silicon substrate of the first conductivity-type; and a heating treatment step of heating the insulation-processed region to insulate a surface of the insulation-processed region, thereby eliminating leakage between the crystalline silicon substrate of the first conductivity-type and the silicon-based layer of the opposite conductivity-type, which has been generated by laser processing in the insulation process step, wherein the heating treatment step is performed after the protecting layer forming step.