发明名称 FLASH CELL AND FLASH CELL SET
摘要 A flash cell includes a gate, a source/drain and a selector. The gate is disposed on a substrate, wherein the gate includes a control gate disposed on the substrate and a floating gate sandwiched by the control gate and the substrate. The source/drain is disposed in the substrate beside the gate. The selector electrically connects the source/drain, wherein the selector includes a bottom electrode, a resistance threshold switching material layer and a top electrode, and the resistance threshold switching material layer is sandwiched by the bottom electrode and the top electrode. A flash cell set includes a plurality of said flash cells. The flash cells electrically connect to each other by their selectors, and all of the selectors electrically connect to one same bit line.
申请公布号 US2016133635(A1) 申请公布日期 2016.05.12
申请号 US201414536693 申请日期 2014.11.10
申请人 UNITED MICROELECTRONICS CORP. 发明人 Hsiung Chang-Po
分类号 H01L27/115;H01L45/00 主分类号 H01L27/115
代理机构 代理人
主权项 1. A flash cell, comprising: a gate disposed on a substrate, wherein the gate comprises a control gate disposed on the substrate and a floating gate sandwiched by the control gate and the substrate; a source/drain disposed in the substrate beside the gate; and a selector electrically connecting the source/drain and only disposed in a first dielectric layer physically contacting the substrate, wherein the selector comprises a bottom electrode, a resistance threshold switching material layer and a top electrode, and the resistance threshold switching material layer is sandwiched by the bottom electrode and the top electrode.
地址 Hsin-Chu City TW