发明名称 |
FLASH CELL AND FLASH CELL SET |
摘要 |
A flash cell includes a gate, a source/drain and a selector. The gate is disposed on a substrate, wherein the gate includes a control gate disposed on the substrate and a floating gate sandwiched by the control gate and the substrate. The source/drain is disposed in the substrate beside the gate. The selector electrically connects the source/drain, wherein the selector includes a bottom electrode, a resistance threshold switching material layer and a top electrode, and the resistance threshold switching material layer is sandwiched by the bottom electrode and the top electrode. A flash cell set includes a plurality of said flash cells. The flash cells electrically connect to each other by their selectors, and all of the selectors electrically connect to one same bit line. |
申请公布号 |
US2016133635(A1) |
申请公布日期 |
2016.05.12 |
申请号 |
US201414536693 |
申请日期 |
2014.11.10 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Hsiung Chang-Po |
分类号 |
H01L27/115;H01L45/00 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
1. A flash cell, comprising:
a gate disposed on a substrate, wherein the gate comprises a control gate disposed on the substrate and a floating gate sandwiched by the control gate and the substrate; a source/drain disposed in the substrate beside the gate; and a selector electrically connecting the source/drain and only disposed in a first dielectric layer physically contacting the substrate, wherein the selector comprises a bottom electrode, a resistance threshold switching material layer and a top electrode, and the resistance threshold switching material layer is sandwiched by the bottom electrode and the top electrode. |
地址 |
Hsin-Chu City TW |