发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A semiconductor device is inhibited from being degraded in reliability. The semiconductor device has a tab including a top surface, a bottom surface, and a plurality of side surfaces. Each of the side surfaces of the tab has a first portion continued to the bottom surface of the tab, a second portion located outwardly of the first portion and continued to the top surface of the tab, and a third portion located outwardly of the second portion and continued to the top surface of the tab to face the same direction as each of the first and second portions. In planar view, the outer edge of the semiconductor chip is located between the third portion and the second portion of the tab, and the outer edge of an adhesive material fixing the semiconductor chip to the tab is located between the semiconductor chip and the second portion.
申请公布号 US2016133549(A1) 申请公布日期 2016.05.12
申请号 US201514981452 申请日期 2015.12.28
申请人 RENESAS ELECTRONICS CORPORATION 发明人 TAKADA Keita;DANNO Tadatoshi;KATO Hirokazu
分类号 H01L23/495;H01L23/31 主分类号 H01L23/495
代理机构 代理人
主权项
地址 Tokyo JP