| 摘要 |
A low-temperature polycrystalline silicon thin-film transistor GOA circuit, for use in forward and reverse scan transmission, comprising multiple cascade GOA units, where N is set as a positive integer, a level N GOA unit employs multiple n-type transistors and multiple p-type transistors, the level N GOA unit comprises: a transmission part (100), a transmission control part (200), a data storage part (300), a data removal part (400), an output control part (500), and an output buffer part (600). Employment of a transmission gate for transmission of a signal between upper/lower levels, employment of a NOR gate logic unit and a NAND gate for conversion of the signal, and employment of a timing inverter and an inverter for storage and transmission of the signal solve the problem of poor component circuit stability and large power consumption of an LTPS single-type TFT and the problem of TFT electric leakage of a single-type GOA circuit, thus optimizing circuit performance, and allowing implementation of a ultra-narrow frame or frameless design. |
