| 摘要 |
In described examples, a method (100) for forming a stacked semiconductor package includes providing a bottom leadframe (LF) panel, including LFs downset each including terminals (101). Low side (LS) transistors are attached to the first die attach area (102). A first clip panel including first clips downset and interconnected are placed on the bottom LF panel (103). A dielectric interposer is attached on the first clips over the LS transistors (104). High side (HS) transistors are attached on the interposers (105). A second clip panel including second clips is mated to interconnect to the HS transistors, including mating together the second clip panel, first clip panel and bottom LF panel (106). The LFs can include a second die attach area, and a controller die attached on the second die attach area, and then pads of the controller die wire bonded to the terminals. |
