发明名称 RESISTANCE CHANGE ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a resistance change element capable of being operated repeatedly while maintaining a high ON/OFF ratio.SOLUTION: In a two terminal element whose resistance changes by oxygen vacancies moving in metal oxide through an electric field, among two metal electrodes sandwiching a metal oxide layer TaOx, a SiOlayer is inserted between one metal electrode Pt and the metal oxide layer TaOx. By the structure, a conductive filament grows in the metal oxide layer and even when almost reaches the opposing electrode, voltage applied to the element does not concentrate in a remaining metal oxide portion X having high resistance but also distributes to the SiOlayer by a significant amount, thereby insulation breakdown of the portion X is prevented. The inhibition characteristics represented by the insulation breakdown portion growing due to the repeated ON/OFF operations is thereby prevented from being rapidly deteriorated by the voltage distribution to the SiOlayer immediately before the ON operation.SELECTED DRAWING: Figure 6
申请公布号 JP2016076655(A) 申请公布日期 2016.05.12
申请号 JP20140207339 申请日期 2014.10.08
申请人 NATIONAL INSTITUTE FOR MATERIALS SCIENCE 发明人 HASEGAWA TAKESHI;WANG CHI;TSURUOKA TORU;ITO YAOMI;AONO MASAKAZU
分类号 H01L27/105;H01L45/00;H01L49/00 主分类号 H01L27/105
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