发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve detection accuracy of overcurrent.SOLUTION: A semiconductor device comprises: a gate drive circuit 10 for generating a gate drive signal; a semiconductor element having a first gate to which the gate drive signal is applied; a current detection element having a second gate; a correction circuit 16 for applying voltage to the second gate on receipt of the gate drive signal; and a protection circuit 17 which drops voltage of the gate drive signal or shuts down the gate drive circuit when emitter current of the current detection element becomes larger than a predetermined value. During a mirror period, the correction circuit applies to the second gate, voltage lower than voltage applied to the first gate.SELECTED DRAWING: Figure 1
申请公布号 JP2016077110(A) 申请公布日期 2016.05.12
申请号 JP20140207138 申请日期 2014.10.08
申请人 MITSUBISHI ELECTRIC CORP 发明人 TSUNODA TETSUJIRO
分类号 H02M1/08;H01L21/822;H01L27/04;H02M1/00;H03K17/08 主分类号 H02M1/08
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