| 摘要 |
Disclosed is an atomic layer deposition device processing a large area substrate. A gas supply device for a large area atomic layer deposition device includes: multiple gas providing parts separately providing different types of deposition gases to multiple substrates; and a plasma providing part exciting reaction gas of the deposition gases into plasma to provide the plasma to the substrates. The plasma providing part includes: an electrode part including a gas buffer part, formed to take the reaction gas inside, and connected with a power supply part; a spray panel placed on the bottom of the electrode part, and including multiple spray holes; an insulating part placed on the bottom of the spray panel, and including multiple first openings matched with the spray holes respectively; and a ground connection part placed on the bottom of the insulating part, including multiple second openings matched with the spray holes respectively, and connected to the ground. The plasma is generated in the first and second openings. |
