| 摘要 |
PROBLEM TO BE SOLVED: To bring about an image sensor capable of reducing crosstalk between pixels while improving quantum efficiency, and improvement in a method of manufacturing the same.SOLUTION: An image sensor device includes a substrate having a first conductivity type. A plurality of photosensitive regions including first, second and third photosensitive regions, corresponding to R, G and B pixels, are provided on a substrate. In order to separate the photosensitive regions each other, an insulation structure is arranged on the substrate. A photodiode structure is formed in each photosensitive region. A deep well structure has a second conductivity type. The deep well structure overlaps only the second and third photosensitive regions. The deep well structure does not overlap the first photosensitive region.SELECTED DRAWING: Figure 1 |
