THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME

摘要

An exemplary embodiment provides a thin film transistor array panel including: a substrate; a gate line; a semiconductor layer; a data wire layer; a first passivation layer; and a second passivation layer. The gate line is disposed on the substrate and includes a gate electrode. The semiconductor layer is disposed on the substrate. The data wire layer is configured to include a data line disposed on the substrate to cross the gate line, a source electrode connected to the data line, and a drain electrode disposed to face the source electrode. The first passivation layer is disposed on a channel region between the source electrode and the drain electrode. The second passivation layer is disposed on the first passivation layer, the source electrode, and the drain electrode. A width of the first passivation layer disposed on the channel region is equal to or smaller than a distance between the source electrode and the drain electrode.

主权项

1. A manufacturing method of a thin film transistor array panel, the method comprising:
forming a gate line including a gate electrode on a substrate; forming a gate insulating layer on the gate line; forming a semiconductor material layer and a data wire material layer on the gate insulating layer; forming a first photosensitive film pattern on the data wire material layer, the first photosensitive film pattern including a first region and a second region having a thickness which is thicker than that of the first region; etching the data wire material layer and the semiconductor material layer by using the first photosensitive film pattern as a mask; forming a second photosensitive film pattern by etching back the first photosensitive film pattern; forming a data wire layer including a source electrode, a drain electrode, and a data line on the semiconductor material layer by using the second photosensitive film pattern as a mask; forming a first passivation layer on the second photosensitive film pattern and a channel region between the source electrode and the drain electrode; and removing the first passivation layer disposed on the second photosensitive film pattern by lifting off the second photosensitive film pattern.