发明名称 |
JUNCTIONLESS TUNNEL FET WITH METAL-INSULATOR TRANSITION MATERIAL |
摘要 |
Embodiments of the present disclosure provide an integrated circuit (IC) structure, which can include: a doped semiconductor layer having a substantially uniform doping profile; a first gate structure positioned on the doped semiconductor layer; and a second gate structure positioned on the doped semiconductor layer, the second gate structure including a metal-insulator transition material and a gate dielectric layer separating the metal-insulator transition material from the doped semiconductor layer. |
申请公布号 |
US2016133648(A1) |
申请公布日期 |
2016.05.12 |
申请号 |
US201414537188 |
申请日期 |
2014.11.10 |
申请人 |
International Business Machines Corporation |
发明人 |
Bajaj Mohit;Gundapaneni Suresh;Konar Aniruddha;Murali Kota V.R.M.;Nowak Edward J. |
分类号 |
H01L27/12;H01L29/51;H01L21/02;H01L29/10;H01L21/84;H01L29/66;H01L29/423 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Armonk NY US |