发明名称 Method of Manufacturing a Semiconductor Device
摘要 A semiconductor device manufacturing method comprising the steps of providing a matrix substrate having a main surface with plural device areas formed thereon, fixing plural semiconductor chips to the plural device areas respectively, then sealing the plural semiconductor chips all together with resin to form a block sealing member, dividing the block sealing member and the matrix substrate for each of the device areas by dicing, thereafter rubbing a surface of each of the diced sealing member portions with a brush, then storing semiconductor devices formed by the dicing once into pockets respectively of a tray, and conveying the semiconductor devices each individually from the tray. Since the substrate dividing work after block molding is performed by dicing while vacuum-chucking the surface of the block sealing member, the substrate division can be done without imposing any stress on an external terminal mounting surface of the matrix substrate.
申请公布号 US2016133521(A1) 申请公布日期 2016.05.12
申请号 US201614995185 申请日期 2016.01.13
申请人 Renesas Electronics Corporation 发明人 Munakata Tadashi;Oosaka Shingo;Kinoshita Mitsuru;Yamagushi Yoshihiko;Takahashi Noriyuki
分类号 H01L21/78;H01L21/673;H01L21/683;H01L21/02 主分类号 H01L21/78
代理机构 代理人
主权项
地址 Tokyo JP