SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a silicon carbide semiconductor device (200) wherein the state thereof can be switched between an on-state and an off-state by means of a channel region control by applying a gate voltage. The silicon carbide semiconductor device (200) has a silicon carbide layer (20), a gate insulating film (50), and a gate electrode (60). The silicon carbide layer (20) has a channel region (CH). The gate insulating film (50) covers the channel region (CH). The gate electrode (60) faces the channel region (CH) with the gate insulating film (50) therebetween. The resistance of the channel region (CH) in the on-state has the minimum value at a temperature of 100-150°C.