发明名称 Metal oxide thin film, method for depositing metal oxide thin film and device comprising metal oxide thin film
摘要 The invention relates to a metal oxide thin film comprising ²-MoO3 comprising at least one doping element of the group Re, Mn, and Ru. Further, the invention relates to a method of producing such a metal oxide thin film via sputtering and a thin film device comprising a metal oxide thin film comprising ²-MoO3 comprising at least one doping element of the group Re, Mn, and Ru.
申请公布号 EP3018111(A1) 申请公布日期 2016.05.11
申请号 EP20140192219 申请日期 2014.11.07
申请人 PLANSEE SE 发明人 HITOSUGI, TARO
分类号 C04B35/495;C04B35/622;C09K9/00;C23C14/08;G02F1/15;G06F3/044 主分类号 C04B35/495
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