LASER ANNEALING METHOD AND LASER ANNEALING APPARATUS

摘要

[Problem] To perform high-quality annealing. [Solution] (a) A semiconductor substrate is prepared in which dopants are added to a relatively deep area of a surface layer portion at relatively low concentration and dopants are added to a relatively shallow area at relatively high concentration. (b) The semiconductor substrate is irradiated with a laser beam so that high concentration dopants added to the relatively shallow area are activated by melting the semiconductor substrate to a position deeper than the area with the high concentration dopant added thereto and low concentration dopants added to the relatively deep area are activated without melting the semiconductor substrate to the area with the low concentration dopant added thereto.